PUBLICATION

  • D. Chen et al., “Total-ionizing dose and single-event effect test results of analog and mixed signal devices from Analog Devices,” 2018 Radiation Effects Data Workshop Proceedings.

  • D. Chen et al., “Heavy Ion and Proton-induced Single Event Upset Characteristics of a 3D NAND Flash Memory,” IEEE Trans. Nucl. Sci. vol. 65, no. 1, pp. 19 – 26, Jan. 2018.

  • M. O'Bryan et al., “NASA Goddard Space Flight Center's compendium of recent single event effects results,” Radiation Effects Data Workshop proceedings, pp. 7 – 14, 2018.

  • D. Chen et al., “Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory,” IEEE Trans. Nucl. Sci., vol. 64, no. 1, pp. 332 – 337, Jan. 2017.

  • M. O'Bryan et al., “Compendium of single event effects results from NASA Goddard Space Flight Center and NASA Electronics Parts and Packaging Program,” Radiation Effects Data Workshop proceedings, pp. 48 – 56, 2017.

  • A. D. Topper et al., “Compendium of total ionizing dose and displacement damage results from NASA Goddard Space Flight Center and NASA Electronics Parts and Packaging Program,” Radiation Effects Data Workshop proceedings, pp. 37 – 47, 2017.

 

  • M. O'Bryan et al., “Compendium of single event effects results from NASA Goddard Space Flight Center,” Radiation Effects Data Workshop proceedings, pp. 19 – 30, 2016.

  • M. J. Campola et al., “Compendium of total ionizing dose and displacement damage results from NASA Goddard Space Flight Center,” Radiation Effects Data Workshop proceedings, pp. 10 – 18, 2016.

 

  • D. Chen et al. “Single-event effect performance of a conductive-bridge memory EEPROM,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2703-2708, Dec. 2015.

  • M. O'Bryan et al., “Compendium of current single event effects for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 45 – 53, 2015.

Forest
Lighthouse

  • M. J. Campola et al., “Compendium of current total ionizing dose and displacement damage for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 67 – 75, 2015.

  • D. Chen et al. “Radiation performance of a commercial embedded ReRAM,” IEEE Trans. Nucl. Sci., vol. 61, no. 6, pp. 3088-3094, Dec. 2014.

 

  • K. A. LaBel et al., “Compendium of single event effects, total ionizing dose, and displacement damage for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 213 – 224, 2014.

  • M. O'Bryan et al., “Compendium of recent single event effects for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 22 – 29, 2013.

  • A. Boutte et al., “Compendium of recent total ionizing dose and displacement damage for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 7 – 15, 2013.

  • D. Chen et al., “Evaluation of enhanced low dose rate sensitivity in discrete bipolar junction transistors,” 2012 Radiation Effects Data Workshop proceedings.

  • M. O’Bryan et al., “Compendium of single event effects for candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 22 – 30, 2012.

  • D. Cochran et al., “Compendium of total ionizing dose and displacement damage of candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 13 – 21, 2012.

 

  • D. Chen et al., “Enhanced low dose rate sensitivity at ultra-low dose rates,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2983 - 2990, Dec. 2011.

 

  • T. Oldham et al., “Effect of radiation exposure on the retention of commercial NAND flash memory,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, part 1, pp. 2904 - 2910, Dec. 2011.

  • M. O’Bryan et al., “Current Single event effects compendium of candidate electronics for NASA space systems,” Radiation Effects Data Workshop proceedings, pp. 33 – 45, 2011.

  • D. Cochran et al., “Recent total ionizing dose and displacement damage compendium of candidate electronics for NASA space systems,” Radiation Effects Data Workshop proceedings, pp. 23 – 32, 2011.

  • D. Chen et al., “The effects of ELDRS at ultra-low dose rates,” Radiation Effects Data Workshop proceedings, pp. 111 – 116, 2010.

 

  • D. Chen et al., “Radiation performance of commercial SiGe HBT BiCMOS high speed operational amplifiers,” Radiation Effects Data Workshop proceedings, pp. 142 – 146, 2010.

 

  • C. Marshal et al., “Mechanisms and temperature dependence of single event latchup observed in a CMOS readout integrated circuit from 16 – 300 K,” IEEE Trans. on Nucl. Sci., vol. 57, no. 6, pp. 3078 – 3086, Dec. 2010.

 

  • M. O’Bryan et al., “Current Single event effects compendium of candidate electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 32 – 43, 2010.

  • D. Cochran et al., “Total ionizing dose and displacement damage compendium of candidate electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 117 – 124, 2010.

  • D. Chen et al., “The effects of elevated temperature on pulsed-laser-induced single event transients in analog devices,” IEEE Trans. on Nucl. Sci., vol. 56, no. 6, pp. 3138 – 3144, Dec. 2009.

  • M. O’Bryan et al., “Single event effects compendium of candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 15 – 24, 2009.

 

  • D. Cochran et al., “Total ionizing dose and displacement damage compendium of candidate spacecraft electronics for NASA,” Radiation Effects Data Workshop proceedings, pp. 25 – 31, 2009.

 

  • D. Chen et al., “Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors,” IEEE Tran. On Nucl Sci., vol. 54, no. 6, pp. 1931 – 1937, Dec. 2007.

 

  • D. Chen et al., “Total dose response of Ge MOS capacitors with HfO2/Dy2O3 gate stacks,” IEEE Trans. on Nucl. Sci., vol. 54, no. 4, pp. 971 – 974, Aug. 2007.

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