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RBP40M1A-L

Radiation upscreened, high reliability, plastic encasuplated, PNP Bipolar Junction Transistor (BJT)

PNP BJT qualified to AEC-Q101 standards for reliability, and upscreened to 50 krad of total-ionizing dose

BVCEO > 40 V

IC = -1A High Continuous Current

VCE(sat) = -500 mV @ 1A

-55 to +150 ℃ Operating Temperature

Lead-Free & Fully RoHS Compliant

Halogen and Antimony Free

Case: SOT23

Case Material: Molded Plastic

Weight: 0.01 grams

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